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Ушбу иш иқтибос қилган ишлар

11 та иш

Иш: Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. The physics of semiconductor devices

    R. H. Rediker

    Мақола197011 иқтибос
    ABI

  3. Methods for measuring parameters of semiconductor materials

    Diana E. Tuzova, Ekaterina A. Pecherskaya, Mikhail A. Nelyutskov +1

    Мақола20234 иқтибос
    ABI

  4. Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

    H. Rahab, A. Keffous, H. Menari +3

    Мақола20013 иқтибос
    ABI

  5. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

    G. Ottaviani, K. N. Tu, J. W. Mayer

    Мақола19812 иқтибос
    ABI

  6. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    A. Keffous, Marwa Zitouni, Y. Belkacem +2

    Мақола20022 иқтибос
    ABI

  7. Modification of Al/Si interface and Schottky barrier height with chemical treatment

    Zs. J. Horváth, M. Ádám, I.A. Szabó +2

    Мақола20022 иқтибос
    ABI

  8. Electron-Hole Recombination in Germanium

    R. N. Hall

    Мақола19522 иқтибос
    ABI

  9. Thermal reaction of nickel and Si0.75Ge0.25 alloy

    K. L. Pey, W. K. Choi, Sujay Chattopadhyay +4

    Мақола20022 иқтибос
    ABI

  10. The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

    L.J. Jin, K. L. Pey, W. K. Choi +6

    Мақола20042 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI