Relaxation process features of photoconductivity in p-i-n structures

Аннотация

We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced "well" is observed in time dependences of the photovoltage pulse after photoexcitation of these structures. Our experimental data are indicative of abnormal relaxation of photoconductivity in silicon pi-n diodes.

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DOI

10.15407/spqeo13.03.259

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