The composition dependence of the effective thickness of the base layer in Al x Ga1 − x P/GaP heterophotoconverters
M. A. AbdukadyrovTashkent University of Information Technologies, Tashkent, 100084, UzbekistanI. O. DzhumaniyazovTashkent University of Information Technologies, Tashkent, 100084, UzbekistanР. А. МуминовPhysicotechnical Institute NPO Fizika-Solntse, Uzbek Academy of Sciences, Tashkent, 700084, Uzbekistan
ABI
Аннотация
The dependence between the composition of Al x Ga1 − x P heterophotoconverters and the effective thickness of their base layers was established. An empirical formula to estimate the effective thickness of a base layer as a function of the composition of solid-state solution (0 ≤ x ≤ 0.8) was proposed.
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
Кўрсаткичлар — AkademScholar · Тез орада