Correlation between Resistance Switching States and Photoluminescence Emission in ZnO Films
Vadim Sh. YalishevDepartment of Thermophysics, Academy of Sciences, Tashkent 700135, UzbekistanSh. U. YuldashevQuantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, KoreaYeon Soo KimDivision of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701, KoreaBae Ho ParkDivision of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701, Korea
ABI
Аннотация
We investigated the resistance switching characteristics of the Ag/ZnO/Pt/Si structure and their influence on the photoluminescence (PL) properties of the ZnO layer. Two resistance states were obtained by applying voltages of the same polarity. The resistance switching in the Ag/ZnO/Pt/Si device was ascribed to the formation/disruption of conducting filaments in the ZnO layer during switching processes. PL measurements of the ZnO film showed a significant increase in the visible emission from samples switched to the low resistance state (LRS). This PL signal was attributed to emission from defects generated in the ZnO layer during transition from the high resistance state (HRS) to the more conductive LRS.
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