Ionic mobility and attenuation of ultrasound in doped cerium trifluoride crystals
A. L. PirozerskiĭPhysical Faculty, St. Petersburg State University, Petrodvorets, St. Petersburg, RussiaE. V. CharnayaPhysical Faculty, St. Petersburg State University, Petrodvorets, St. Petersburg, RussiaЕ. Л. ЛебедеваPhysical Faculty, St. Petersburg State University, Petrodvorets, St. Petersburg, RussiaЕ. Н. ЛатышеваPhysical Faculty, St. Petersburg State University, Petrodvorets, St. Petersburg, RussiaН. И. СорокинShubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, RussiaV. F. KrivorotovDepartment of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. A. FridmanDepartment of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Dielectric properties of CeF3 crystals doped by aluminum, erbium, and holmium were studied in the temperature range of 290–450 K and frequency range of 25 Hz-1 MHz. Cole-Cole diagrams are constructed. An equivalent circuit consisting of a resistance, capacitance and CPE element is suggested for interpretation of the obtained results. Ionic movement parameters are determined as dependent on the temperature. An acoustooptic method was used to measure ultrasound attenuation in the frequency range of 200–800 MHz.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос10 та фойдаланилган манба