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Dependence of Resistance Switching Voltage on the Potential Barrier in ZnO Thin Films

Vadim Sh. YalishevcDivision of Quantum Phases & Devices, School of Physics, Konkuk University, Seoul, KoreaSh. U. YuldashevbQuantum‐Functional Semiconductor Research Center, Dongguk University, Seoul, KoreaBae Ho ParkbQuantum‐Functional Semiconductor Research Center, Dongguk University, Seoul, KoreaJisoon IhmHyeonsik Cheong

AIP conference proceedingsjournal2011en

ABI

Аннотация

We have studied the electric properties of Au/ZnO/Al structures that exhibit a reproducible resistance switching under the applied voltage. Rupture and recovery of the conductive filaments at the ZnO/Au interface were suggested as responsible for this switching. Trapped charge electrons in the interface states can change width and height of a Shottky‐like barrier that exists on the Au/ZnO interface. However, the changing of the interface barrier characteristics leads to change of the resistance switching properties, decreasing or increasing their values.

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Advanced Memory and Neural Computing Machine Learning and ELM Gas Sensing Nanomaterials and Sensors

Идентификаторлар

DOI: 10.1063/1.3666295

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