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Иш: The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

1. Trap creation in silicon dioxide produced by hot electrons

   D. J. DiMaria, J. Stasiak

   Мақола19893 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.665093

2. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.694129

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.694130