Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides
Hongjun XuBeijing 100081Ming-Chien HsuDepartment of Electrical and Computer EngineeringHuei‐Ru FuhDepartment of Chemical Engineering & Materials ScienceJiafeng FengBeijing 100190Xiufeng HanBeijing 100190Yanfeng ZhaoBeijing 100081Duan ZhangBeijing 100081Xinming WangChinese Academy of SciencesFang LiuChinese Academy of SciencesHuajun LiuChinese Academy of SciencesJiung ChoKorea Basic Science InstituteMiri ChoiChuncheon 24341Byong Sun ChunDaejeon 305-340Cormac Ó CoileáinBeijing 100081Zhi WangBeijing 100081M. B. A. JalilDepartment of Electrical and Computer EngineeringHan‐Chun WuBeijing 100081Ching‐Ray ChangDepartment of Physics and Institute of Applied Physics
ABI
Аннотация
A large negative, threshold, and quadratic magnetoresistance of −10% is observed in VS<sub>2</sub>.
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