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Иш: The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

1. Development of technology for creating high-voltage p0–n0 junctions based on GaAs

   A. M. Sultanov, Abdusattor Abdukarimov, M. Z. Kufian

   МақолаSemiconductor Lasers and Optical DevicesBulletin of the Karaganda University Physics Series20231 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.003365