EFFECTIVE PHOTOGRAPHIC REGISTRATION OF INFRARED RADIATION USING A SEMICONDUCTOR IONIZATION CAMERA

In this work, we propose a new design of a semiconductor photographic system in which Si (.Pt) serves as a photodetector of infrared radiation up to λ = 4.2 μm. The results of a numerical calculation on the optimal doping by the method of thermal diffusion of the Si (Pt) photodetector are compared with experimental data. Photo and thermoelectric characteristics of the photographic system are given.

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