Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

1. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

   D. V. Lang

   Мақола19749 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424573

2. Impurities and point defects in semiconductors

   V. V. Emtsev, T.V. Mashovets

   Мақола19817 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.360584

3. Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

   Sharifa B. Utamuradova

   МақолаSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.514939

4. Capacitance Transient Spectroscopy

   G. L. Miller, D. V. Lang, Lionel C. Kimerling

   Мақола19773 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.682681

5. Transition-metal impurities in semiconductors

   Peter Vogl

   Боб20072 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.615437

6. Electrical observation of the Au-Fe complex in silicon

   S. D. Brotherton, Peter D. Bradley, A. Gill +1

   Мақола19842 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.682680

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.694309

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.694310

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.694311

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.694312