Mathematical modeling of the diffusion process of a semiconductor detector
RAMIZULLA MUMINOVInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanYorkin ToshmurodovKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization EngineersGiyosjon ErgashevInstitute of Materials Science, SPA “Physics-Sun”, Academy of Science of UzbekistanMAHMODJON YAVQOCHDIYEVKarshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
ABI
Аннотация
The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is 50 × 50 × 1.5 mm and 8 bands, and compares them.
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