STUDY OF PHOTODIODE STRUCTURES IN THE GALLIUM ARSENIDE-CADMIUM SULFIDE SYSTEM
Gaibov Abdumalik GaybullaevichPh.D. Researcher, Tashkent State Technical University, Tashkent, UzbekistanBotirova Manzura JumaevnaAssistant Teacher, Tashkent State Technical University, Tashkent, UzbekistanAtametov Nigora AbdumalikovnaComputer Science Teacher Academic Lyceum of Tashkent state University
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Abstract: It is shown in this work that in a two barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of blockable pn-hetero- (pGaAs-nCdS) and metal-semiconductor (m-pGaAs) junctions can have an identical form, where the formation mechanism is determined by the processes, occurring in the space charge regions located mainly in the common (pGaAs) region.
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