Investigation of Thin Films MgAl2O4, Deposited on the Si Substrates by Vacuum Thermal Evaporation
А. В. СтанчикState Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus”В. Ф. ГременокState Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus”E.L. TrukhanovaState Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus”VITAL KHOROSHKOBelarusian State University of Informatics and RadioelectronicsS. X. SuleymanovInstitute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of UzbekistanВ. Г. ДыскинInstitute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of UzbekistanM. U. DjanklichInstitute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of UzbekistanН. А. КулагинаInstitute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of UzbekistanSHAKHBOZ YO. AMIROVInstitute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
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Аннотация
The article presents data on the study of X-ray structural and microstructural characteristics of thin films of aluminum-magnesium spinel MgAl2O4 deposited on Si substrates by vacuum thermal evaporation. MgAl2O4 films have a polycrystalline rhombic structure. The values of the unit cell parameters of MgAl2O4 are calculated. Scanning electron and atomic force microscopy showed that MgAl2O4 films have a densely packed structure without cracks. Physical characteristics and good adhesion of MgAl2O4 thin films to silicon substrates indicate their possibility of using in devices of opto- and microelectronics.
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