Characteristics of Solar Cells Based on Polycrystalline Silicon
B. M. AbdurakhmanovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanM. M. AdilovInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanM. Kh. AshurovInstitute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, 100214, Tashkent, village of Ulugbek, UzbekistanХ. Б. АшуровInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, Uzbekistan
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Аннотация
The results of comparison of the efficiency and radiation resistance of solar cells made of single-crystal silicon and polycrystalline silicon (multisilicon) are presented. It is shown that film solar cells synthesized with using the chloride process when using multisilicon as a substrate material are not inferior in their characteristics to solar cells made of single-crystal silicon.
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