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Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells

Ulugbek ErkaboevNamangan Institute of Engineering and Technology, Kasansay Street. 7, Namangan, Namangan 160115, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology, Kasansay Street. 7, Namangan, Namangan 160115, UzbekistanJ. I. MirzaevNamangan Institute of Engineering and Technology, Kasansay Street. 7, Namangan, Namangan 160115, UzbekistanUlugbek NegmatovNamangan Institute of Engineering and Technology, Kasansay Street. 7, Namangan, Namangan 160115, UzbekistanN. A. SayidovNamangan Institute of Engineering and Technology, Kasansay Street. 7, Namangan, Namangan 160115, Uzbekistan
ABI

Аннотация

In this work, the influence of two-dimensional state density on oscillations of transverse electrical conductivity in heterostructures with rectangular quantum wells is investigated. A new analytical expression is derived for calculating the temperature dependence of the transverse electrical conductivity oscillation and the magnetoresistance of a quantum well. For the first time, a mechanism has been developed for oscillating the transverse electrical conductivity and magnetoresistance of a quantum well from the first-order derivative of the magnetic field (differential) [Formula: see text] at low temperatures and weak magnetic fields. The oscillations of electrical conductivity and magnetoresistance of a narrow-band quantum well with a nonparabolic dispersion law are investigated. The proposed theory investigated the results of experiments of a narrow-band quantum well (In x Ga[Formula: see text]Sb).

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