Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

For the first time, the temperature dependence of transverse magnetoresistance oscillations of heterostructured semiconductors based on quantum wells was determined by temperature variation of the two-dimensional energy state density. A new analytical expression was developed to calculate the temperature dependence of the transverse electrical conductivity and magnetoresistance of the quantum well. A mathematical model has been developed that determines the temperature dependence of the first and second order differential magnetoresistance oscillations due to magnetic field induction. Using the proposed model, dissociation of continuous ρ⊥2d(E, B, T, d) at constant low temperatures into amplitudes of quantum oscillations is substantiated based on the proposed model. It has been observed that the results of experiments on ∂(ρ⊥2d(E, B, T, d)/∂B obtained at consistently low temperatures of a narrow band quantum winding (InxGa1−xSb) are transformed into a continuous energy spectrum in the dynamics of high temperatures.

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