Factors of Efficient Generation of Electricity in a Solar Cell with Nanohetero Junctions

The question of using non-crystalline silicon as a substrate of an effective solar cell is considered. It is shown that the creation of an effective solar cell from non-crystalline silicon is possible only at high densities of localized states in the depth of the silicon band gap. It is shown that a particularly effective conversion of solar energy into electricity is possible when noncrystalline silicon and lead chalcogenides are combined as components of hetero junctions in the nano-dimensional state. It is shown that the use of non-crystalline silicon as a substrate for an effective solar cell is possible only when combined with nanoscale lead chalcogenides. It is shown that the effects of multiexiton generation and carrier multiplication are especially characteristic of lead chalcogenides. The ranges of the effects of carrier multiplication and multi-exciton generation in nanoclusions of lead chalcogenides (PbS, PbSe) have been determined.

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