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Иш: Development of technology for creating high-voltage p0–n0 junctions based on GaAs

1. Radiation dynamics of GaAs-AlGaAs superluminescent leds: Study and features

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   МақолаSemiconductor Quantum Structures and DevicesAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.007416