ELECTROPHYSICAL PROPERTIES OF NANOFILMS
K.T. DovranovKarshi State University. Karshi 180100. UzbekistanM.T. ormuradovKarshi State University. Karshi 180100. UzbekistanA.A. UlashovKarshi State University. Karshi 180100. UzbekistanI. DoniyorovaKarshi State University. Karshi 180100. Uzbekistan
ABI
Аннотация
Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10<sup>-5</sup> sm<sup>3</sup>/C.
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