POWER AMPLIFIER BASED ON COMPOSITE INJECTION-VOLTAIC TRANSISTORS

The problem of high-current radio engineering devices is related to the fact that the use of high-power transistors and other semiconductor devices is limited by such a phenomenon as a secondary breakdown, in which there is a sharp decrease in the voltage on the device with simultaneous internal current lacing, and the device fails. To solve the problem of secondary breakdown, schemes have been proposed that operate stably at reverse voltage values 4-5 times higher than usual and at power dissipation 2-3 times higher than the maximum allowable power for an individual device. The problem is proposed to be solved by using composite transistors. This is the most optimal way, since passive elements are not used. The article proposes and investigates power amplifiers based on the use of composite bipolar transistors operating in the injection-voltaic mode. A method of active emitter self-stabilization of power amplifiers based on composite transistors with the same band gap is proposed and theoretically substantiated, which makes it possible to reduce the total coefficient of non-linear distortion and the instability of the quiescent current of power amplifiers depending on the supply voltage and temperature.

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