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Pulsed tunnel effect: new perspectives for controlling superconducting devices

R.KH. RAKHIMOVInstitute of Materials Science of the Academy of Science of Uzbekistan
ABI

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The article is devoted to the study of pulsed tunneling effect and its new prospects in the control of superconducting devices. The quantum nature of electrical resistance, including the quantum Hall effect, the Klitzing quantum resistance, and the Josephson effect, is considered. Particular attention is paid to the role of quantum size effects in the formation of the electrical resistance of nanostructures and molecular conductors. The article highlights new prospects for the use of pulsed tunneling effect to control the characteristics of superconducting devices.

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