Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing
Noureddine ElboughdiriChemical Engineering Department, College of Engineering, University of Ha'il, P.O. Box 2440, Ha'il 81441, Saudi ArabiaShahid IqbalDepartment of Physics, University of Wisconsin, La Crosse, WI, USASherzod AbdullaevEngineering School, Central Asian University, Tashkent, UzbekistanMohammed AljohaniDepartment of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi ArabiaAkif SafeenDepartment of Physics, University of Poonch Rawalakot, Rawalakot 12350, PakistanKhaled AlthubeitiDepartment of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi ArabiaSattam Al OtaibiDepartment of Physics, United Arab Emirates University, United Arab Emirates
ABI
Аннотация
Expression of concern for ‘Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing’ by Noureddine Elboughdiri et al. , RSC Adv. , 2023, 13 , 35993–36008, https://doi.org/10.1039/D3RA06853F.
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