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Ушбу иш иқтибос қилган ишлар

20 та иш

Иш: Investigation of electrical and optoelectrical efficiency in the fabricated two-dimensional MoTe2 field-effect transistor

  1. Electric Field Effect in Atomically Thin Carbon Films

    Kostya S. Novoselov, A. K. Geǐm, С. В. Морозов +5

    Мақола200466 иқтибос
    ABI

  2. Van der Waals heterostructures

    A. K. Geim, I. V. Grigorieva

    Мақола201312 иқтибос
    ABI

  3. Ultrasensitive photodetectors based on monolayer MoS2

    Oriol Lopez-Sanchez, Dominik Lembke, Metin Kayci +2

    Мақола20138 иқтибос
    ABI

  4. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

    Freddie Withers, Osvaldo Del Pozo-Zamudio, Artem Mishchenko +8

    Мақола20154 иқтибос
    ABI

  5. Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe<sub>2</sub>/MoS<sub>2</sub> Dichalcogenide Heterojunction

    Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari +2

    Мақола20164 иқтибос
    ABI

  6. Non-volatile phototransistor based on two dimensional MoTe<sub>2</sub> nanostructures

    Kamoladdin Saidov, Khakimjan Butanov, Jamoliddin Razzokov +3

    Мақола2D Materials and ApplicationsE3S Web of Conferences20233 иқтибос
    ABI

  7. Anomalous Dimensionality‐Driven Phase Transition of MoTe<sub>2</sub> in Van der Waals Heterostructure

    Huije Ryu, Yangjin Lee, Hyun‐Jung Kim +13

    Мақола20213 иқтибос
    ABI

  8. Bandgap opening in few-layered monoclinic MoTe2

    Dong Hoon Keum, Suyeon Cho, Jung Ho Kim +9

    Мақола20153 иқтибос
    ABI

  9. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

    Woo Jong Yu, Yuan Liu, Hailong Zhou +4

    Мақола20133 иқтибос
    ABI

  10. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

    Hennrik Schmidt, Francesco Giustiniano, Goki Eda

    Шарҳ мақола20152 иқтибос
    ABI

  11. Carrier Polarity Control in α-MoTe<sub>2</sub> Schottky Junctions Based on Weak Fermi-Level Pinning

    Shu Nakaharai, Mahito Yamamoto, Keiji Ueno +1

    Мақола20162 иқтибос
    ABI

  12. Defect-Affected Photocurrent in MoTe<sub>2</sub> FETs

    Mohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul +3

    Мақола20192 иқтибос
    ABI

  13. Edge Contact for Carrier Injection and Transport in MoS<sub>2</sub> Field-Effect Transistors

    Homin Choi, Byoung Hee Moon, Jung Ho Kim +5

    Мақола20192 иқтибос
    ABI

  14. Multilayer MoTe<sub>2</sub> Field‐Effect Transistor at High Temperatures

    Faisal Ahmed, Abde Mayeen Shafi, David M. A. Mackenzie +7

    Мақола20212 иқтибос
    ABI

  15. Light-Tunable Charge Density Wave Orders in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoTe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WTe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Single Layers

    Giovanni Marini, Matteo Calandra

    Мақола20212 иқтибос
    ABI

  16. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI

  17. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

    Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

    МақолаAdvanced Memory and Neural ComputingNanomaterials20231 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  19. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI