Мақола

UV to NIR photodetection in lateral homojunction PN diode of WSe<sub>2</sub> achieved <i>via</i> IGZO sputtering

Muhammad AbubakrDepartment of Electrical Engineering, Sejong University, Seoul, 05006, Republic of KoreaMuhammad Hamza PervezDepartment of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of KoreaArslan RehmatDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, Republic of KoreaMuhammad Asghar KhanDepartment of AI Convergence Electronic Engineering, Sejong University, Seoul, 05006, Republic of KoreaEhsan ElahiDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague 616628, Czech RepublicMuhammad AsimDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, Republic of KoreaMuhammad RabeelDepartment of Electrical Engineering, Sejong University, Seoul, 05006, Republic of KoreaMuhammad Jawad NasimDepartment of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of KoreaZeesham AbbasDepartment of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of KoreaMalik Abdul RehmanDepartment of Chemical Engineering, New Uzbekistan University, Tashkent 100007, UzbekistanAize HaoCollege of Chemical Engineering, Sichuan University of Science and Engineering, Zigong 643000, Sichuan, P. R. ChinaJonghwa EomDepartment of Physics & Astronomy, Sejong University, Seoul, 05006, Republic of KoreaShania RehmanDepartment of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of KoreaMuhammad Farooq KhanDepartment of AI Convergence Electronic Engineering, Sejong University, Seoul, 05006, Republic of Korea

Journal of Materials Chemistry Cjournal2025en

ABI

Аннотация

A WSe 2 -based lateral homojunction PN diode with IGZO-induced polarity modulation exhibits high rectification, photoresponsivity (40.1 A W −1 ), and quantum efficiency (13634%), showcasing potential for next-generation optoelectronic devices.

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Мавзулар

2D Materials and Applications Chalcogenide Semiconductor Thin Films Heusler alloys: electronic and magnetic properties

Идентификаторлар

DOI: 10.1039/d4tc04705b

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