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Ушбу иш иқтибос қилган ишлар

43 та иш

Иш: The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

  1. Electronic irradiation of TlInSxSe2−x (x = 1): Morphology, structure and raman scattering

    M. Yu. Tashmetov, F. K. Khallokov, N.B. Ismatov +2

    МақолаSolid-state spectroscopy and crystallographyInternational Journal of Modern Physics B202113 иқтибос
    ABI

  2. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    МақолаQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B20248 иқтибос
    ABI

  3. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Мақола20204 иқтибос
    ABI

  4. The influence of electron beams to structure parameters of multi walled carbon nanotube

    I.I. Yuldashova, M. Yu. Tashmetov

    МақолаCarbon Nanotubes in CompositesPhysica B Condensed Matter20193 иқтибос
    ABI

  5. Atomic Radii in Crystals

    J. C. Slater

    Мақола19643 иқтибос
    ABI

  6. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Мақола19903 иқтибос
    ABI

  7. Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons

    E. Clementi, D. L. Raimondi, William P. Reinhardt

    Мақола19673 иқтибос
    ABI

  8. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Мақола20163 иқтибос
    ABI

  9. Materials science and engineering: An introduction

    Clive R. Clayton

    Мақола19873 иқтибос
    ABI

  10. Atomic and electron structure of the GaAs (001) surface

    S. E. Kulkova, С. В. Еремеев, A. V. Postnikov +2

    Мақола20072 иқтибос
    ABI

  11. GaAs nanocrystals: Structure and vibrational properties

    Jhasaketan Nayak, S.N. Sahu, Satoshi Nozaki

    Мақола20052 иқтибос
    ABI

  12. Microhardness profile in heteroepitaxial InAs/GaAs structures

    E. P. Trifonova, L. Hitova

    Мақола19932 иқтибос
    ABI

  13. Effects of oxygen implantation in GaAs

    L. He, W.A. Anderson

    Мақола19932 иқтибос
    ABI

  14. Porous layers on compensated GaAs:Cr

    A. S̆imkien≐, J. Sabataityt≐, V. Karpus +4

    Мақола20032 иқтибос
    ABI

  15. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Мақола20072 иқтибос
    ABI

  16. Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges

    Z. P. Wang, L. Ley, M. Cardona

    Мақола19822 иқтибос
    ABI

  17. High-purity GaAs and Cr-doped GaAs epitaxial layers by MBE

    H. Morkoç, A. Y. Cho

    Мақола19792 иқтибос
    ABI

  18. Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

    J. Schneider, B. Dischler, H. Seelewind +5

    Мақола19892 иқтибос
    ABI

  19. Brinell and Vickers Hardness Measurement Using Image Processing and Analysis Techniques

    Pedro P. Rebouças Filho, Tarique da Silveira Cavalcante, Victor Hugo C. de Albuquerque +1

    Мақола20092 иқтибос
    ABI

  20. Experimental evidence for a negative-<i>U</i>center in gallium arsenide related to oxygen

    H. Ch. Alt

    Мақола19902 иқтибос
    ABI

  21. Characterization of Physical, Thermal and Structural Properties of Chromium (VI) Oxide Powder: Impact of Biofield Treatment

    Mahendra Kumar Trivedi

    Мақола20152 иқтибос
    ABI

  22. Mikro- und Ultramikrohärteprüfung an GaAs-Einkristallen

    F. Bergner, Ute Bergmann, Michael Schäper +2

    Мақола20012 иқтибос
    ABI

  23. Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique

    M. Hassan, Saima Younas, Falak Sher +3

    Мақола20172 иқтибос
    ABI

  24. Measurement uncertainty of surface roughness measurement

    G Farkas, Ágota Drégelyi-Kiss

    Мақола20182 иқтибос
    ABI

  25. Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

    Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales 170004, Colombia, Camilo Pulzara-Mora, José Doria-Andrade +7

    Мақола20242 иқтибос
    ABI