Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Influence of high-fluence electron irradiation on the band gap, Raman spectra, and microhardness of ZnSe

1. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   МақолаSemiconductor Quantum Structures and DevicesPhysica Scripta20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002581

2. Physical mechanisms of structural, morphological, and property changes in ZnS and ZnSe under electron irradiation

   M Yu Tashmetov, A V Belushkin, Bakhtiyar Madaminov +1

   МақолаSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.001729

3. Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

   M.Yu. Tashmetov, Sh. Makhkamov, Sohibjon Egamov +2

   МақолаSilicon and Solar Cell TechnologiesPhysica B Condensed Matter20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.006431