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10 та иш

Иш: Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

  1. General Relationship for the Thermal Oxidation of Silicon

    B. E. Deal, Andrew S. Grove

    Мақола19653 иқтибос
    ABI

  2. Method to Measure the Precipitated and Total Oxygen Concentration in Silicon

    L. Jastrzȩbski, P. J. Zanzucchi, D. Thébault +1

    Мақола19823 иқтибос
    ABI

  3. Oxygen Segregation and Microscopic Inhomogeneity in Czochralski Silicon

    Wen Lin, Michael Stavola

    Мақола19853 иқтибос
    ABI

  4. Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline

    F01 Committee

    Бошқа20003 иқтибос
    ABI

  5. Czochralski growth of silicon

    W. Zulehner

    Мақола19832 иқтибос
    ABI

  6. Oxygen precipitation and microdefects in Czochralski-grown silicon crystals

    Kiyoshi Yasutake, M. Umeno, H. Kawabe

    Мақола19842 иқтибос
    ABI

  7. Stress in The SiO2/Si Structures Formed by Thermal Oxidation

    A. Szekeres

    Боб19982 иқтибос
    ABI

  8. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    МақолаSilicon Nanostructures and PhotoluminescenceSilicon20241 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI