Electrophysical Properties and Surface Characteristics of BaTiO ₃ Thin Films Produced by Ion-Plasma Method

BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> thin films were deposited on monocrystalline $\mathrm{Si}(111)$ substrates via RF magnetron sputtering, and their structural, morphological, and electrical properties were systematically investigated. AFM and SEM analyses confirmed the formation of uniform and dense films with thicknesses ranging from 140 to 160 nm, while EDS confirmed a near-stoichiometric BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> composition. XRD patterns revealed the presence of a crystalline perovskite phase, improving with increasing film thickness. Hall effect measurements indicated n-type conductivity with a carrier concentration of $\mathbf{1. 4 3} \times \mathbf{1 0}^{\mathbf{1 8}} \mathbf{~ c m}^{-\mathbf{3}}$, while mobility decreased with rising temperature due to phonon scattering. Furthermore, the electrical performance was shown to depend on electrode contact materials, demonstrating the compatibility of BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> with various device architectures. These findings suggest that RF sputtered BaTiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> thin films are promising for optoelectronic applications requiring high thermal stability, excellent dielectric response, and reliable electrical performance.

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