Ушбу иш иқтибос қилган ишлар

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Иш: 2D MoTe2 memristors for energy-efficient artificial synapses and neuromorphic applications

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices
Nasir Ilyas, Jinyong Wang, Chunmei Li +7
Мақола20213 иқтибос
ABI
Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology
Saima Batool, Muhammad Idrees, Shirui Zhang +2
Шарҳ мақола20223 иқтибос
ABI
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
Woong Huh, Donghun Lee, Chul‐Ho Lee
Шарҳ мақола20203 иқтибос
ABI
Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect
Hai Huang, Jianlu Wang, Weida Hu +13
Мақола20163 иқтибос
ABI
Robust memristors based on layered two-dimensional materials
Miao Wang, Songhua Cai, Chen Pan +11
Мақола20183 иқтибос
ABI
Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control
Mengqi Zeng, Yao Xiao, Jinxin Liu +2
Шарҳ мақола20183 иқтибос
ABI
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
Vinod K. Sangwan, Hong‐Sub Lee, Hadallia Bergeron +4
Мақола20183 иқтибос
ABI
Сарлавҳасиз
Бошқа3 иқтибос
ABI
A light-stimulated synaptic device based on graphene hybrid phototransistor
Shuchao Qin, Fengqiu Wang, Yujie Liu +6
Мақола20173 иқтибос
ABI
Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus
Taimur Ahmed, Sruthi Kuriakose, Edwin Mayes +5
Мақола20193 иқтибос
ABI
Two-dimensional materials for next-generation computing technologies
Chunsen Liu, Huawei Chen, Shuiyuan Wang +5
Шарҳ мақола20203 иқтибос
ABI
Stimuli‐Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing
Hongyu Bian, Yi Yiing Goh, Yuxia Liu +3
Шарҳ мақола20213 иқтибос
ABI
Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion
Changli Li, Qi Cao, Faze Wang +4
Шарҳ мақола20183 иқтибос
ABI
Van der Waals integration before and beyond two-dimensional materials
Yuan Liu, Yu Huang, Xiangfeng Duan
Шарҳ мақола20193 иқтибос
ABI
Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
Xiaobing Yan, Jianhui Zhao, Sen Liu +4
Мақола20173 иқтибос
ABI
A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping
Muhammad Waqas Iqbal, Ehsan Elahi, Aliya Amin +4
Мақола20203 иқтибос
ABI
Anomalous Dimensionality‐Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
Huije Ryu, Yangjin Lee, Hyun‐Jung Kim +13
Мақола20213 иқтибос
ABI
High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing
Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4
МақолаAdvanced Memory and Neural ComputingSensors and Actuators A Physical20252 иқтибос
ABI
Ultrafast Synaptic Events in a Chalcogenide Memristor
Yi Li, Yingpeng Zhong, Lei Xu +4
Мақола20132 иқтибос
ABI
Nonvolatile Memory with Multilevel Switching: A Basic Model
M. J. Rozenberg, Isao Inoue, M. J. Sánchez
Мақола20042 иқтибос
ABI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Krzysztof Szot, W. Speier, Gustav Bihlmayer +1
Мақола20062 иқтибос
ABI
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee +1
Мақола20112 иқтибос
ABI
Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride
Chengbin Pan, Yanfeng Ji, Na Xiao +13
Мақола20172 иқтибос
ABI
Graphene and Related Materials for Resistive Random Access Memories
Fei Hui, Enric Grustan‐Gutierrez, Shibing Long +4
Мақола20172 иқтибос
ABI
Deep learning in spiking neural networks
Amirhossein Tavanaei, Masoud Ghodrati, Saeed Reza Kheradpisheh +2
Шарҳ мақола20182 иқтибос
ABI

Ушбу иш иқтибос қилган ишлар

Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Highly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect

Robust memristors based on layered two-dimensional materials

Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

Сарлавҳасиз

A light-stimulated synaptic device based on graphene hybrid phototransistor

Optically Stimulated Artificial Synapse Based on Layered Black Phosphorus

Two-dimensional materials for next-generation computing technologies

Stimuli‐Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

Van der Waals integration before and beyond two-dimensional materials

Memristor with Ag‐Cluster‐Doped TiO<sub>2</sub> Films as Artificial Synapse for Neuroinspired Computing

A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping

Anomalous Dimensionality‐Driven Phase Transition of MoTe<sub>2</sub> in Van der Waals Heterostructure

High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

Ultrafast Synaptic Events in a Chalcogenide Memristor

Nonvolatile Memory with Multilevel Switching: A Basic Model

Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Graphene and Related Materials for Resistive Random Access Memories

Deep learning in spiking neural networks