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Иш: Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors
Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3
Мақола201211 иқтибос
ABI
An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs
Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1
Мақола201611 иқтибос
ABI
GaN nanowire ultraviolet photodetector with a graphene transparent contact
A. V. Babichev, H. Zhang, Pierre Lavenus +5
Мақола201310 иқтибос
ABI
Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays
Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji
Мақола201910 иқтибос
ABI
Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11
Мақола20119 иқтибос
ABI
Improvement of carrier ballisticity in junctionless nanowire transistors
Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2
Мақола20119 иқтибос
ABI
A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun
Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8
Мақола20159 иқтибос
ABI
Electrical and optical properties of nanowires based solar cell with radial p-n junction
O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4
Мақола20198 иқтибос
ABI
Controlled Doping Methods for Radial p/n Junctions in Silicon
Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3
Мақола20147 иқтибос
ABI
A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers
S.C. Jain, D.J. Roulston
Мақола19912 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI