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Иш: Conductive filament dynamics in cerium-doped ZnFe₂O₄ thin films for enhanced unipolar resistive switching in RRAM devices
NIH Image to ImageJ: 25 years of image analysis
Caroline A Schneider, Wayne Rasband, Kevin W. Eliceiri
Мақола201224 иқтибосABIMemristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang, Matthew D. Pickett, Xuema Li +3
Мақола20088 иқтибосABIRole of Oxygen Vacancies in Cr‐Doped SrTiO<sub>3</sub> for Resistance‐Change Memory
M. Janousch, G. I. Meijer, U. Staub +3
Мақола20074 иқтибосABIEnhanced stability of filament-type resistive switching by interface engineering
Мақола20173 иқтибосABI