Halogen-engineered bandgap modulation in lead-free Li2TlGaZ6 (Z = Cl, I) double perovskites for advanced optoelectronics: A first-principles study
D. N. ShuklaDepartment of Physics, University of Lucknow, Lucknow, Uttar Pradesh, IndiaAparna DixitDepartment of Basic Sciences and Humanities, Pranveer Singh Institute of Technology, Kanpur 209305, U.P., IndiaPreeti KumariSchool of Chemical Engineering and Physical Sciences, Lovely Professional University, Phagwara-144411, Punjab, IndiaRamesh SharmaDepartment of Applied Sciences, Feroze Gandhi Institute of Engineering and Technology, Raebareli-229001, Uttar Pradesh, IndiaA. ShuklaDepartment of Physics, University of Lucknow, Lucknow, Uttar Pradesh, IndiaJisha Annie AbrahamDepartment of Physics, National Defence Academy, Khadakwasla, Pune 411023, Maharashtra, IndiaAlka MisraDepartment of Mathematics and Astronomy, University of Lucknow, Uttar Pradesh, IndiaYedluri Anil KumarDepartment of Condensed Matter Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, SIMATS, Chennai 602105, IndiaMirjalol IsmoilovTechnical Faculty, Urgench State University, Urgench, Uzbekistan
2026en
ABI
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