Мақола

Bi <sub>2</sub> TeO <sub>6</sub> ‐Interfaced Perovskite/Silicon Heterojunction Photodetectors With Pyro‐Phototronic Enhancement for Intelligent Anti‐Counterfeiting

Xiaodi JiaSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaShujie JiaoSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaHengyu ShangSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaYimin JinSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaZehao ShiSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaMing GeSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaPenghui WangSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaJunjie HeSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaKhurshid TashpulatovSamarkand State Institute of Foreign LanguagesDongbo WangSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaShiyong GaoSchool of Materials Science and Engineering Harbin Institute of Technology Harbin ChinaLiancheng ZhaoSchool of Materials Science and Engineering Harbin Institute of Technology Harbin China

2026en

ABI

Аннотация

ABSTRACT As machine vision increasingly demands high‐performance optoelectronics, solution‐processed perovskites (PVKs) integrated on silicon (Si) offer a viable route to surpass conventional photodetector (PD) limits in ultraviolet (UV) sensitivity and spectral selectivity the integration. However, traditional monolithic integration is strictly hindered by severe lattice mismatch and interfacial defects. Here, we report a self‐powered PVK/Si PD enabled by an engineered interlayer. The layers and distorted corner‐sharing octahedra promote high‐quality PVK crystallization and interfacial compatibility, while simultaneously generating a pyro‐phototronic effect, thereby amplifying the photoelectric conversion process. As a result, a dual‐band PD is demonstrated, exhibiting strong pyro‐phototronic enhancement (505 % at 320 nm) in the UV and exceptional specific detectivity in the visible regime ( Jones at 550 nm), outperforming conventional Si‐based PDs in both UV sensitivity and spectral selectivity. Integrating this capability with a convolutional neural network (CNN), we further develop a dual‐wavelength intelligent anti‐counterfeiting recognition platform based on CNN, achieving robust authentication performance. This work establishes a general interfacial strategy for integrating PVKs on Si and highlights the combined advantages of pyro‐phototronics and intelligent optical recognition for next‐generation photodetection and Si‐compatible optoelectronic systems.

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Идентификаторлар

DOI: 10.1002/adfm.77457

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