Indium Phosphide Quantum Dots for Light‐Emitting Devices: Fundamentals, Recent Advances, and Technology Roadmaps

ABSTRACT Indium phosphide (InP) quantum dots (QDs) have emerged as the leading cadmium‐free emitters for next‐generation light‐emitting devices, offering broad spectral tunability, environmental compatibility, and strong potential for integration into advanced display technologies. Recent advances in core/shell engineering have enabled significant improvements in optical performance, including PLQY reaching 76%–93%, FWHM reduced to 36–37 nm, and Stokes shifts exceeding 100 nm in engineered heterostructures. These enhancements have directly contributed to improved color purity, reduced self‐absorption, and enhanced radiative efficiency in device architectures. This review consolidates the fundamental photophysical principles governing InP‐based emission, including electronic structure, defect chemistry, surface passivation mechanisms, and exciton dynamics. Despite these advances, the field continues to face persistent bottlenecks such as charge injection asymmetry, interfacial nonradiative recombination, long‐term instability under electrical stress, and scalability limitations of complex multi‐shell systems. Addressing these challenges requires an integrated technology roadmap that unifies materials design, charge transport optimization, photonic engineering, and manufacturable processing strategies. This review offers a structured perspective on recent advances in InP‐based QD LEDs and their potential pathways toward improved device performance and scalability.

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