Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Role of Oxygen Vacancies in Cr‐Doped SrTiO₃ for Resistance‐Change Memory

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   МақолаAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

   Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

   МақолаAdvanced Memory and Neural ComputingRSC Advances20244 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.000258

3. Supercontinuum Generation in Cr-Doped Bulk SrTiO3

   A. G. Shmelev, Д. К. Жарков, A. V. Leontyev +2

   МақолаLaser Material Processing TechniquesBulletin of the Russian Academy of Sciences Physics20190 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.001485