Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
Tuo ShiLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR ChinaRui YangLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR ChinaXin GuoLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China
2016en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба