Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   МақолаAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000048

2. 2D MoTe₂ memristors for energy-efficient artificial synapses and neuromorphic applications

   Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

   Шарҳ мақолаAdvanced Memory and Neural ComputingNanoscale20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.review-article.000035