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6 та иш

Иш: Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

  1. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    МақолаAdvanced Memory and Neural ComputingNanoscale20228 иқтибос
    ABI

  2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    МақолаAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 иқтибос
    ABI

  3. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

    МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20244 иқтибос
    ABI

  4. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

    Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

    МақолаAdvanced Memory and Neural ComputingSensors and Actuators A Physical20252 иқтибос
    ABI

  5. Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

    Naveed Ur Rahman, Muhammad Adil Mahmood, Nasir Rahman +5

    МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20240 иқтибос
    ABI

  6. 2D MoTe<sub>2</sub> memristors for energy-efficient artificial synapses and neuromorphic applications

    Sattam Al Otaibi, Naveed ur Rehman, Sujith Kalluri +7

    Шарҳ мақолаAdvanced Memory and Neural ComputingNanoscale20250 иқтибос
    ABI