Properties of Ni doped and Ni–Ga co-doped ZnO thin films prepared by pulsed laser deposition
Xuetao WangState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaLiping ZhuState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaLiqiang ZhangState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaJie JiangState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaZhiguo YangState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaZhizhen YeState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of ChinaBeibei HeNational Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People's Republic of China
2010en
ABI
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