Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Ultra-Low Switching Voltage Induced by Inserting SiO₂Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

1. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

   Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

   МақолаAdvanced Memory and Neural ComputingRSC Advances20244 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.000258

2. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20242 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.000393