Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts
Sikandar AftabSejong UniversityMuhammad Waqas IqbalDepartment of PhysicsAmir Muhammad AfzalDepartment of Physics and the Astronomy and Graphene Research InstituteMuhammad Farooq KhanDepartment of Physics and the Astronomy and Graphene Research InstituteGhulam HussainDepartment of PhysicsHafiza Sumaira WaheedDepartment of PhysicsMuhammad Arshad KamranAl-Zulfi 11932
2019en
ABI
Аннотация
junction were calculated to be 90 meV and 300 meV, respectively. In addition, the device was used for rectification purposes revealing a stable rectifying behavior.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба