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Иш: Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures
Single-layer MoS2 transistors
Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2
Мақола20118 иқтибосABILateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Xidong Duan, Chen Wang, Jonathan C. Shaw +11
Мақола20143 иқтибосABISolar-energy conversion and light emission in an atomic monolayer p–n diode
Andreas Pospischil, Marco M. Furchi, Thomas Mueller
Шарҳ мақола20143 иқтибосABIReSe2/metal interface for hydrogen gas sensing
Sikandar Aftab, Ms Samiya, Mian Sabir Hussain +5
Мақола20212 иқтибосABIArrayed Van Der Waals Broadband Detectors for Dual‐Band Detection
Peng Wang, Shanshan Liu, Wenjin Luo +12
Мақола20172 иқтибосABIAtomically thin p–n junctions with van der Waals heterointerfaces
Chul‐Ho Lee, Gwan‐Hyoung Lee, Arend M. van der Zande +10
Мақола20142 иқтибосABIControl of valley polarization in monolayer MoS2 by optical helicity
Kin Fai Mak, Keliang He, Jie Shan +1
Мақола20122 иқтибосABI