Ушбу ишга иқтибос қилган ишлар

1 та иш

Иш: Methods for determining deep defect concentration from dependence of excess carrier density and lifetime on illumination intensity

1. Characterization of deep defects in CdxHg1 xTe by injection-level spectroscopy of carrier lifetime

   V. A. Gnatyuk, Smagul Karazhanov

   Мақола20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000408