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Иш: Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing
Magnetic properties of Mn-doped ZnO
Tomoteru Fukumura, Zhengwu Jin, M. Kawasaki +4
Мақола20018 иқтибосABIFe-doped ZnO magnetic semiconductor by mechanical alloying
Yan Lin, Dongmei Jiang, Fan Lin +2
Мақола20066 иқтибосABIAbsence of ferromagnetism in bulk polycrystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>Zn</mml:mi><mml:mn>0.9</mml:mn></mml:msub><mml:msub><mml:mi>Co</mml:mi><mml:mn>0.1</mml:mn></mml:msub><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:math>
Sheng Yin, Mingxiang Xu, Lin Yang +10
Мақола20064 иқтибосABIRobust memristors based on layered two-dimensional materials
Miao Wang, Songhua Cai, Chen Pan +11
Мақола20183 иқтибосABIMagnetic properties of Fe doped, Co doped, and Fe+Co co-doped ZnO
J. J. Beltrán, J. Osorio, C. A. Barrero +2
Мақола20133 иқтибосABIAbsence of ferromagnetism in Co and Mn substituted polycrystalline ZnO
G. Lawes, Aditi Risbud, A. P. Ramirez +1
Мақола20053 иқтибосABI