Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor
Phuong Huyen NguyenDepartment of Smart-Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of KoreaDuc Hieu NguyenDepartment of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of KoreaHyojung KimCenter for Composite Materials and Concurrent Design, Sungkyunkwan University, Suwon 16419, Republic of KoreaHyung Mo JeongDepartment of Smart-Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of KoreaHye Min OhDepartment of Physics, Kunsan National University, Kunsan 54150, Republic of KoreaMun Seok JeongDepartment of Physics and Department of Energy Engineering, Hanyang University, Seoul 04763, Republic of Korea
2022en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба