Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

1. Silicon Photovoltaic Cells with Deep p–n-Junction

   М. К. Бахадырханов, С. Б. Исамов, Z. T. Kenzhaev +3

   МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy202015 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000147

2. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

   М. К. Бахадырханов, Z. T. Kenzhaev

   МақолаSilicon and Solar Cell TechnologiesTechnical Physics20219 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.235264