Oxygen vacancies enhance pseudocapacitive charge storage properties of MoO3−x
Hyunjung KimDepartment of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USAJohn B. CookDepartment of Chemistry and Biochemistry, UCLA, Los Angeles, California 90095-1569, USAHao LinDepartment of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USAJesse S. KoDepartment of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USASarah H. TolbertDepartment of Chemistry and Biochemistry, UCLA, Los Angeles, California 90095-1569, USAVidvuds OzoliņšDepartment of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USABruce DunnDepartment of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595, USA
2016en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба