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Injection-based photodetectors

І. М. ВикулинUkrainian Academy of Communications, Odessa, 62029, UkraineШ. Д. КурмашевMechnikov National University, Odessa, 65063, UkraineV. I. StafeevNPO Orion Federal State Unitary Enterprise, Moscow, 111123, Russia
2008en
ABI

Аннотация

Physical principles of the operation of injection-based photodiodes are generalized. The unified approach to studying the photoelectric phenomena with the injection-based amplification is substantiated. Physical mechanisms of injection-related amplification and the parameters and characteristics of photodetectors are discussed. Diodes for ultraviolet, visible, and infrared spectral regions with sensitivity much higher than in the injection-free analogues are considered.

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