Peculiar electric and photoelectric behavior of lead-containing perovskite-type oxides
O. I. ProkopaloRostov State University , Rostcv-on-Don 61, USSRI. P. RaevskiiRostov State University , Rostcv-on-Don 61, USSRM. A. MalitskayaRostov State University , Rostcv-on-Don 61, USSRYu. M. PopovRostov State University , Rostcv-on-Don 61, USSRAlexei A. BokovRostov State University , Rostcv-on-Don 61, USSRV. G. SmotrakovRostov State University , Rostcv-on-Don 61, USSR
1982en
ABI
Аннотация
Electrophysical properties and photoconductivity of several binary (PbTiO3, PbZrO3, PbHfO3) and ternary (Pb2ScNbO6, Pb2InNbO6) lead-containing perovskite-type oxides were investigated. Band gap energies for all studied compounds were measured to be somewhat smaller than for its perovskite analogs not containing lead. This fact is ascribed to a specific configuration of the outer electronic shell of lead.Owing to high photosensitivity of the lead-containing perovskites, a considerable effect of electronic subsystem (in particular of the non-equilibrium carriers) on crystal properties both in ferroelectric and antiferroelectric crystal phases was observed.
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